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2N322 PDF Specs and Replacement


   Type Designator: 2N322
   Material of Transistor: Ge
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics


   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO5
 

 2N322 Substitution

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2N322 PDF detailed specifications

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isc Silicon NPN Power Transistor 2N3226 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% test Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba... See More ⇒

Detailed specifications: 2N3212 , 2N3213 , 2N3214 , 2N3215 , 2N3216 , 2N3217 , 2N3218 , 2N3219 , A1013 , 2N3220 , 2N3221 , 2N3222 , 2N3223 , 2N3224 , 2N3225 , 2N3226 , 2N3227 .

Keywords - 2N322 pdf specs

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