BU810 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU810
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
BU810 Transistor Equivalent Substitute - Cross-Reference Search
BU810 Datasheet (PDF)
bu810.pdf
BU810MEDIUM VOLTAGE NPN FAST-SWITCHINGDARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS FAST SWITCHING SPEED INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS HORIZONTAL DEFLECTION FOR32MONOCHROME TVs 1 GENERAL PURPOSE SWITCHING TO-220DESCRIPTION The BU810 is a Multiepitaxial Planar NPNTransistor i
bu810.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU810 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High Switching Speed APPLICATIONS Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
