BU810 Datasheet. Specs and Replacement

Type Designator: BU810  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

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BU810 datasheet

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BU810

BU810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS FAST SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS HORIZONTAL DEFLECTION FOR 3 2 MONOCHROME TVs 1 GENERAL PURPOSE SWITCHING TO-220 DESCRIPTION The BU810 is a Multiepitaxial Planar NPN Transistor i... See More ⇒

 ..2. Size:105K  inchange semiconductor

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BU810

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU810 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) High Switching Speed APPLICATIONS Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT ... See More ⇒

Detailed specifications: BU807, BU807F, BU807FI, BU808, 2SB647-C, BU808DFI, BU808DXI, BU808FI, B647, BU824, BU826, BU826A, BU902, BU902F, BU903, BU903F, BU908

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