All Transistors. BU810 Datasheet

 

BU810 Datasheet and Replacement


   Type Designator: BU810
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220
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BU810 Datasheet (PDF)

 ..1. Size:63K  st
 bu810.pdf pdf_icon

BU810

BU810MEDIUM VOLTAGE NPN FAST-SWITCHINGDARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS FAST SWITCHING SPEED INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS HORIZONTAL DEFLECTION FOR32MONOCHROME TVs 1 GENERAL PURPOSE SWITCHING TO-220DESCRIPTION The BU810 is a Multiepitaxial Planar NPNTransistor i

 ..2. Size:105K  inchange semiconductor
 bu810.pdf pdf_icon

BU810

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU810 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High Switching Speed APPLICATIONS Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KT8101A | C8050C | 2SD1376 | 3DA150C | ECG95 | MPS6570 | R8066

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