BU810 Datasheet and Replacement
Type Designator: BU810
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
BU810 Substitution
BU810 Datasheet (PDF)
bu810.pdf

BU810MEDIUM VOLTAGE NPN FAST-SWITCHINGDARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS FAST SWITCHING SPEED INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS HORIZONTAL DEFLECTION FOR32MONOCHROME TVs 1 GENERAL PURPOSE SWITCHING TO-220DESCRIPTION The BU810 is a Multiepitaxial Planar NPNTransistor i
bu810.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU810 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High Switching Speed APPLICATIONS Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT
Datasheet: BU807 , BU807F , BU807FI , BU808 , 2SB647-C , BU808DFI , BU808DXI , BU808FI , 2SD882 , BU824 , BU826 , BU826A , BU902 , BU902F , BU903 , BU903F , BU908 .
History: KT8143M
Keywords - BU810 transistor datasheet
BU810 cross reference
BU810 equivalent finder
BU810 lookup
BU810 substitution
BU810 replacement
History: KT8143M



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