All Transistors. BU930ZP Datasheet

 

BU930ZP Datasheet and Replacement


   Type Designator: BU930ZP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3

 BU930ZP Transistor Equivalent Substitute - Cross-Reference Search

   

BU930ZP Datasheet (PDF)

 9.1. Size:215K  inchange semiconductor
 bu930.pdf pdf_icon

BU930ZP

isc Silicon NPN Darlington Power Transistor BU930 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Datasheet: BU922 , BU922P , BU922PFI , BU922T , BU926 , BU930 , BU930P , BU930Z , TIP31C , BU931 , BU931P , BU931PFI , BU931R , BU931RP , BU931RPFI , BU931SM , BU931T .

Keywords - BU930ZP transistor datasheet

 BU930ZP cross reference
 BU930ZP equivalent finder
 BU930ZP lookup
 BU930ZP substitution
 BU930ZP replacement

 

 
Back to Top

 


 
.