All Transistors. BU930ZP Datasheet

 

BU930ZP Datasheet and Replacement


   Type Designator: BU930ZP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3
 

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BU930ZP Datasheet (PDF)

 9.1. Size:215K  inchange semiconductor
 bu930.pdf pdf_icon

BU930ZP

isc Silicon NPN Darlington Power Transistor BU930DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: BU922 , BU922P , BU922PFI , BU922T , BU926 , BU930 , BU930P , BU930Z , 100DA025D , BU931 , BU931P , BU931PFI , BU931R , BU931RP , BU931RPFI , BU931SM , BU931T .

History: BA15P26A | AM82325-040 | 3DD13003_F3D | BUL49A | 2SD1681R

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