BUP52 Datasheet. Specs and Replacement
Type Designator: BUP52 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 70 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
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BUP52 Substitution
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BUP52 datasheet
isc Silicon NPN Power Transistor BUP52 DESCRIPTION High DC Current Gain- h >20@I = 20A FE C Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ideally suited for Motor Control, Switching and Linear Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
Detailed specifications: BUP44, BUP45, BUP46, BUP47, BUP48, BUP49, BUP50, BUP51, 2SD313, BUP53, BUP54, BUP56, BUP57, BUP58, BUP59, BUPD1520, BUR10
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