BUS11-6 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUS11-6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BUS11-6 Transistor Equivalent Substitute - Cross-Reference Search
BUS11-6 Datasheet (PDF)
9.1. Size:77K inchange semiconductor
bus11 a.pdf
bus11 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: BUR608 , BUR608D , BUR61 , BUR62 , BUR806 , BUR807 , BUS11 , BUS11-4 , 2SC5200 , BUS11A , BUS11B , BUS12 , BUS12-4 , BUS12-6 , BUS12A , BUS12B , BUS13 .
