All Transistors. BUS11-6 Datasheet

 

BUS11-6 Datasheet and Replacement


   Type Designator: BUS11-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
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BUS11-6 Datasheet (PDF)

 9.1. Size:77K  inchange semiconductor
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BUS11-6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | DRC9143X | BDY12B | CV9507LO | KT208I | ED1602D | SFE245

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