All Transistors. BUT102 Datasheet

 

BUT102 Datasheet and Replacement


   Type Designator: BUT102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BUT102 Datasheet (PDF)

 9.1. Size:64K  st
 but100.pdf pdf_icon

BUT102

BUT100HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL1 UNINTERRUPTABLE POWER SUPPLY2DESCRIPTION The BUT100 is a Multiepitaxial Planar NPNTO-3Transistor in TO-3 package. It is intended for use(version " S ")in high frequency and efficency

 9.2. Size:226K  inchange semiconductor
 but100.pdf pdf_icon

BUT102

isc Silicon NPN Power Transistor BUT100DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min.)CEO(SUS)Hight Current CapabilityHight RuggednessMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor ControlUninterruptable Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

Datasheet: BUS50 , BUS51 , BUS52 , BUS97 , BUS97A , BUS98 , BUS98A , BUT100 , 8550 , BUT11 , BUT11-5 , BUT11-6 , BUT11-7 , BUT11A , BUT11AF , BUT11AFI , BUT11AX .

History: MMBT9018LT1 | TA2616 | TMPA812M6 | MMBTA92L | KT918B-2 | CHDTA143TKGP | KSC5028N

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