BUT102 Datasheet. Specs and Replacement

Type Designator: BUT102  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUT102 datasheet

 9.1. Size:64K  st

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BUT102

BUT100 HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL 1 UNINTERRUPTABLE POWER SUPPLY 2 DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN TO-3 Transistor in TO-3 package. It is intended for use (version " S ") in high frequency and efficency ... See More ⇒

 9.2. Size:226K  inchange semiconductor

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BUT102

isc Silicon NPN Power Transistor BUT100 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min.) CEO(SUS) Hight Current Capability Hight Ruggedness Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor Control Uninterruptable Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec... See More ⇒

Detailed specifications: BUS50, BUS51, BUS52, BUS97, BUS97A, BUS98, BUS98A, BUT100, 2SC2655, BUT11, BUT11-5, BUT11-6, BUT11-7, BUT11A, BUT11AF, BUT11AFI, BUT11AX

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