BUT102 Datasheet and Replacement
Type Designator: BUT102
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUT102 Substitution
BUT102 Datasheet (PDF)
but100.pdf

BUT100HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL1 UNINTERRUPTABLE POWER SUPPLY2DESCRIPTION The BUT100 is a Multiepitaxial Planar NPNTO-3Transistor in TO-3 package. It is intended for use(version " S ")in high frequency and efficency
but100.pdf

isc Silicon NPN Power Transistor BUT100DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min.)CEO(SUS)Hight Current CapabilityHight RuggednessMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor ControlUninterruptable Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: MUN5232DW1
Keywords - BUT102 transistor datasheet
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History: MUN5232DW1



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