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BUV50 Specs and Replacement


   Type Designator: BUV50
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 BUV50 Transistor Equivalent Substitute - Cross-Reference Search

   

BUV50 detailed specifications

 ..1. Size:50K  st
 buv50.pdf pdf_icon

BUV50

BUV50 HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS 1 MOTOR CONTROL 2 DESCRIPTION The BUV50 is a Multiepitaxial planar NPN TO-3 transistor in TO-3 metal case. It s intented for use in high frequency and efficiency converters such... See More ⇒

 ..2. Size:208K  inchange semiconductor
 buv50.pdf pdf_icon

BUV50

isc Silicon NPN Power Transistor BUV50 DESCRIPTION High Current Capability Low Collector Saturation Voltage- V = 0.8V (Max.) @I = 10A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAM... See More ⇒

Detailed specifications: BUV48AFI , BUV48B , BUV48C , BUV48CFI , BUV48CI , BUV48FI , BUV48I , BUV48T , 2N2222 , BUV51 , BUV52 , BUV52A , BUV54 , BUV54A , BUV56 , BUV56A , BUV60 .

Keywords - BUV50 transistor specs

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