All Transistors. BUV50 Datasheet

 

BUV50 Datasheet and Replacement


   Type Designator: BUV50
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BUV50 Datasheet (PDF)

 ..1. Size:50K  st
 buv50.pdf pdf_icon

BUV50

BUV50HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oCAPPLICATION SWITCHING REGULATORS1 MOTOR CONTROL2DESCRIPTIONThe BUV50 is a Multiepitaxial planar NPNTO-3transistor in TO-3 metal case.Its intented for use in high frequency andefficiency converters such

 ..2. Size:208K  inchange semiconductor
 buv50.pdf pdf_icon

BUV50

isc Silicon NPN Power Transistor BUV50DESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 10ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAM

Datasheet: BUV48AFI , BUV48B , BUV48C , BUV48CFI , BUV48CI , BUV48FI , BUV48I , BUV48T , C1815 , BUV51 , BUV52 , BUV52A , BUV54 , BUV54A , BUV56 , BUV56A , BUV60 .

History: 2N4285 | BCW29

Keywords - BUV50 transistor datasheet

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