BUV50 Datasheet. Specs and Replacement

Type Designator: BUV50  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUV50 datasheet

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BUV50

BUV50 HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS 1 MOTOR CONTROL 2 DESCRIPTION The BUV50 is a Multiepitaxial planar NPN TO-3 transistor in TO-3 metal case. It s intented for use in high frequency and efficiency converters such... See More ⇒

 ..2. Size:208K  inchange semiconductor

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BUV50

isc Silicon NPN Power Transistor BUV50 DESCRIPTION High Current Capability Low Collector Saturation Voltage- V = 0.8V (Max.) @I = 10A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAM... See More ⇒

Detailed specifications: BUV48AFI, BUV48B, BUV48C, BUV48CFI, BUV48CI, BUV48FI, BUV48I, BUV48T, 2N2222, BUV51, BUV52, BUV52A, BUV54, BUV54A, BUV56, BUV56A, BUV60

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