BUV50 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV50
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUV50 Transistor Equivalent Substitute - Cross-Reference Search
BUV50 Datasheet (PDF)
1.1. buv50.pdf 
Size:50K _st
BUV50 HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS 1 MOTOR CONTROL 2 DESCRIPTION The BUV50 is a Multiepitaxial planar NPN TO-3 transistor in TO-3 metal case. Its intented for use in high frequency and efficiency converters such us m
1.2. buv50.pdf Size:138K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV50 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
