E6008 Datasheet and Replacement
Type Designator: E6008
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO5
- BJT Cross-Reference Search
E6008 Datasheet (PDF)
nce6008as.pdf

Pb Free Producthttp://www.ncepower.com NCE6008ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =8A Schematic diagram RDS(ON)
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC3712 | 2SA1407E | 2N2872 | 2SA1262 | 2SC1152 | T11 | NB221YX
Keywords - E6008 transistor datasheet
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History: 2SC3712 | 2SA1407E | 2N2872 | 2SA1262 | 2SC1152 | T11 | NB221YX



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