E6008 Datasheet. Specs and Replacement

Type Designator: E6008  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO5

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E6008 datasheet

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E6008

Pb Free Product http //www.ncepower.com NCE6008AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =8A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: E20190, E20192, E20231, E20232, E20235, E20237, E3-28, E5-28, B772, E7133, E7134, E7142, E7150, EA961, EC961, ECG10, ECG100

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