All Transistors. E6008 Datasheet

 

E6008 Datasheet and Replacement


   Type Designator: E6008
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO5
 

 E6008 Substitution

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E6008 Datasheet (PDF)

 0.1. Size:394K  ncepower
 nce6008as.pdf pdf_icon

E6008

Pb Free Producthttp://www.ncepower.com NCE6008ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =8A Schematic diagram RDS(ON)

Datasheet: E20190 , E20192 , E20231 , E20232 , E20235 , E20237 , E3-28 , E5-28 , S8550 , E7133 , E7134 , E7142 , E7150 , EA961 , EC961 , ECG10 , ECG100 .

History: E20232 | 2SC5417

Keywords - E6008 transistor datasheet

 E6008 cross reference
 E6008 equivalent finder
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