2N3550 Datasheet. Specs and Replacement

Type Designator: 2N3550  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO18

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2N3550 datasheet

 9.1. Size:45K  philips

 2n3553.pdf pdf_icon

2N3550

DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor 1995 Oct 27 Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3553 overlay transistor APPLICATIONS DESCRIPTION The 2N3553 is intended for use in VHF and UHF The device is a s... See More ⇒

 9.2. Size:56K  njs

 2n3555.pdf pdf_icon

2N3550

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 9.3. Size:11K  semelab

 2n3558.pdf pdf_icon

2N3550

2N3558 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = dia. IC = 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b... See More ⇒

Detailed specifications: 2N3543, 2N3544, 2N3545, 2N3546, 2N3547, 2N3548, 2N3549, 2N355, 2SD1047, 2N3551, 2N3552, 2N3553, 2N3554, 2N356, 2N3563, 2N3564, 2N3565

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