All Transistors. 2N3550 Datasheet

 

2N3550 Datasheet and Replacement


   Type Designator: 2N3550
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO18
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2N3550 Datasheet (PDF)

 9.1. Size:45K  philips
 2n3553.pdf pdf_icon

2N3550

DISCRETE SEMICONDUCTORSDATA SHEET2N3553Silicon planar epitaxialoverlay transistor1995 Oct 27Product specificationSupersedes data of October 1981File under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationSilicon planar epitaxial2N3553overlay transistorAPPLICATIONS DESCRIPTION The 2N3553 is intended for use in VHF and UHF The device is a s

 9.2. Size:56K  njs
 2n3555.pdf pdf_icon

2N3550

 9.3. Size:11K  semelab
 2n3558.pdf pdf_icon

2N3550

2N3558Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = dia.IC = 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3 can b

Datasheet: 2N3543 , 2N3544 , 2N3545 , 2N3546 , 2N3547 , 2N3548 , 2N3549 , 2N355 , S9014 , 2N3551 , 2N3552 , 2N3553 , 2N3554 , 2N356 , 2N3563 , 2N3564 , 2N3565 .

History: 2SC3712 | 2SA1407E | T11 | 2SA1262 | CSD669B | NB221YX | 2N2872

Keywords - 2N3550 transistor datasheet

 2N3550 cross reference
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