All Transistors. 2N3579 Datasheet

 

2N3579 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3579
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO46

 2N3579 Transistor Equivalent Substitute - Cross-Reference Search

   

2N3579 Datasheet (PDF)

 9.1. Size:319K  rca
 2n105 2n206 2n247 2n269 2n301 2n301a 2n331 2n356 2n357 2n358.pdf

2N3579

 9.2. Size:16K  advanced-semi
 2n3570.pdf

2N3579

2N3570NPN SILICON HIGH FREQUENCY TRANSISTORDESCRIPTION:The 2N3570 is Designed for HighFrequency Low Noise Amplifier andOscillator Applications.PACKAGE STYLE TO- 72MAXIMUM RATINGSIC 50 mAVCB 30 VVCE 15 VVEB 3.0 VPDISS 200 mW @ TC = 25 OCTJ -65 OC to +200 OCTSTG -65 OC to +200 OC1 = EMITTER 2 = BASE3 = COLLECTOR 4 = CASE500 OC/WJCNONECHARACTER

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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