2N3579 Specs and Replacement
Type Designator: 2N3579
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO46
2N3579 Substitution
2N3579 datasheet
2n3570.pdf
2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE 500 OC/W JC NONE CHARACTER... See More ⇒
Detailed specifications: 2N3569 , 2N356A , 2N357 , 2N3570 , 2N3571 , 2N3572 , 2N3576 , 2N3577 , 2SD313 , 2N357A , 2N358 , 2N3580 , 2N3581 , 2N3582 , 2N3583 , 2N3584 , 2N3584X .
History: ZDT45
Keywords - 2N3579 pdf specs
2N3579 cross reference
2N3579 equivalent finder
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History: ZDT45
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