2N3579 Datasheet. Specs and Replacement

Type Designator: 2N3579  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO46

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2N3579 datasheet

 9.1. Size:319K  rca

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2N3579

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 9.2. Size:16K  advanced-semi

 2n3570.pdf pdf_icon

2N3579

2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE 500 OC/W JC NONE CHARACTER... See More ⇒

Detailed specifications: 2N3569, 2N356A, 2N357, 2N3570, 2N3571, 2N3572, 2N3576, 2N3577, BD223, 2N357A, 2N358, 2N3580, 2N3581, 2N3582, 2N3583, 2N3584, 2N3584X

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