All Transistors. GD130 Datasheet

 

GD130 Datasheet and Replacement


   Type Designator: GD130
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 66 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3
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GD130 Datasheet (PDF)

 0.1. Size:883K  nxp
 pmgd130un.pdf pdf_icon

GD130

PMGD130UN20 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast

 0.2. Size:1206K  cn hunteck
 hgi130n12sl hgd130n12sl.pdf pdf_icon

GD130

HGI130N12SL HGD130N12SL, P-1120V N-Ch Power MOSFETFeature 120 VVDS High Speed Power Switching, Logic Level 9.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 68 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | KRC121S | DTC124TSA | KRA741U

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