GD130 Datasheet and Replacement
Type Designator: GD130
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 66 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1.3 A
Max. Operating Junction Temperature (Tj): 90 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3
GD130 Transistor Equivalent Substitute - Cross-Reference Search
GD130 Datasheet (PDF)
pmgd130un.pdf
PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast ... See More ⇒
hgi130n12sl hgd130n12sl.pdf
HGI130N12SL HGD130N12SL , P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 9.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 68 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous... See More ⇒
Datasheet: GCN55 , GCN56 , GD100 , GD110 , GD114 , GD115 , GD120 , GD125 , BD139 , GD133 , GD134 , GD135 , GD142 , GD150 , GD151 , GD152 , GD160 .
History: BDX16 | MPS2222R | 2SA448 | WT5601-06 | 2SD867 | 2SD2214 | 2SA1143
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History: BDX16 | MPS2222R | 2SA448 | WT5601-06 | 2SD867 | 2SD2214 | 2SA1143
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