GD130 Datasheet. Specs and Replacement

Type Designator: GD130  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 66 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 1.3 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3

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GD130 datasheet

 0.1. Size:883K  nxp

 pmgd130un.pdf pdf_icon

GD130

PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast ... See More ⇒

 0.2. Size:1206K  cn hunteck

 hgi130n12sl hgd130n12sl.pdf pdf_icon

GD130

HGI130N12SL HGD130N12SL , P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 9.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 68 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous... See More ⇒

Detailed specifications: GCN55, GCN56, GD100, GD110, GD114, GD115, GD120, GD125, BD139, GD133, GD134, GD135, GD142, GD150, GD151, GD152, GD160

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