All Transistors. GD130 Datasheet

 

GD130 Datasheet and Replacement


   Type Designator: GD130
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 66 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3
 

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GD130 Datasheet (PDF)

 0.1. Size:883K  nxp
 pmgd130un.pdf pdf_icon

GD130

PMGD130UN20 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast

 0.2. Size:1206K  cn hunteck
 hgi130n12sl hgd130n12sl.pdf pdf_icon

GD130

HGI130N12SL HGD130N12SL, P-1120V N-Ch Power MOSFETFeature 120 VVDS High Speed Power Switching, Logic Level 9.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 68 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous

Datasheet: GCN55 , GCN56 , GD100 , GD110 , GD114 , GD115 , GD120 , GD125 , 2N5551 , GD133 , GD134 , GD135 , GD142 , GD150 , GD151 , GD152 , GD160 .

History: BDP281 | MP2833 | KSC2328AY | K2109 | 2SA1890 | FTA1666 | K2111A

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