GD200 Datasheet and Replacement
Type Designator: GD200
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
GD200 Substitution
GD200 Datasheet (PDF)
hgi200n10sl hgd200n10sl.pdf

HGI200N10SL HGD200N10SL P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness45 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
Datasheet: GD180 , GD180A , GD180B , GD180C , GD183 , GD190 , GD191 , GD192 , S8050 , GD203 , GD207 , GD210 , GD220 , GD240 , GD241 , GD241A , GD241B .
History: 2SB120 | BTC2383K3 | 2N719 | KSC2383O | 2SC3549 | 2SC3183K | ET5062
Keywords - GD200 transistor datasheet
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History: 2SB120 | BTC2383K3 | 2N719 | KSC2383O | 2SC3549 | 2SC3183K | ET5062



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