GD200 Datasheet. Specs and Replacement
Type Designator: GD200 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
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GD200 Substitution
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GD200 datasheet
HGI200N10SL HGD200N10SL P-1 , 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 15.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 20.0 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 45 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain... See More ⇒
Detailed specifications: GD180, GD180A, GD180B, GD180C, GD183, GD190, GD191, GD192, 13003, GD203, GD207, GD210, GD220, GD240, GD241, GD241A, GD241B
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BJT Parameters and How They Relate
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