All Transistors. GD200 Datasheet

 

GD200 Datasheet and Replacement


   Type Designator: GD200
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 GD200 Transistor Equivalent Substitute - Cross-Reference Search

   

GD200 Datasheet (PDF)

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GD200

HGI200N10SL HGD200N10SL P-1 , 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 15.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 20.0 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 45 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain... See More ⇒

Datasheet: GD180 , GD180A , GD180B , GD180C , GD183 , GD190 , GD191 , GD192 , 13003 , GD203 , GD207 , GD210 , GD220 , GD240 , GD241 , GD241A , GD241B .

History: BD373D-16 | BD376-16 | BFV60

Keywords - GD200 transistor datasheet

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