GD200 Datasheet, Equivalent, Cross Reference Search
Type Designator: GD200
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
GD200 Transistor Equivalent Substitute - Cross-Reference Search
GD200 Datasheet (PDF)
0.1. Size:965K cn hunteck
hgi200n10sl hgd200n10sl.pdf
hgi200n10sl hgd200n10sl.pdf
HGI200N10SL HGD200N10SL P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness45 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
