All Transistors. GD210 Datasheet

 

GD210 Datasheet and Replacement


   Type Designator: GD210
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 GD210 Transistor Equivalent Substitute - Cross-Reference Search

   

GD210 Datasheet (PDF)

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GD210

HGD210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rect... See More ⇒

Datasheet: GD180C , GD183 , GD190 , GD191 , GD192 , GD200 , GD203 , GD207 , S9014 , GD220 , GD240 , GD241 , GD241A , GD241B , GD242 , GD243 , GD244 .

History: DDTA114YUA | 2SA537A | TP3703 | 2SA484B | 2SA639 | TI462 | MPQ4146

Keywords - GD210 transistor datasheet

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