GD210 Datasheet, Equivalent, Cross Reference Search
Type Designator: GD210
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
GD210 Transistor Equivalent Substitute - Cross-Reference Search
GD210 Datasheet (PDF)
0.1. Size:902K cn hunteck
hgd210n12sl.pdf
hgd210n12sl.pdf
HGD210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness42 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rect
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
