GD210 Datasheet. Specs and Replacement

Type Designator: GD210  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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GD210 datasheet

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GD210

HGD210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rect... See More ⇒

Detailed specifications: GD180C, GD183, GD190, GD191, GD192, GD200, GD203, GD207, S9014, GD220, GD240, GD241, GD241A, GD241B, GD242, GD243, GD244

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