GT813B Datasheet. Specs and Replacement
Type Designator: GT813B 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
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GT813B datasheet
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Detailed specifications: GT8100, GT8101, GT8102, GT8103, GT810A, GT811, GT812, GT813A, 2SD2499, GT813V, GT81H, GT81HS, GT82, GT83, GT87, GT88, GT901A
Keywords - GT813B pdf specs
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BJT Parameters and How They Relate
History: RN2901 | MUN2230T1G | RN2311 | 2N6116 | MT0491 | BDX34C | RN2907FS
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