HEPG0001 Datasheet and Replacement

   Type Designator: HEPG0001
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO5
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