2N3827 Datasheet. Specs and Replacement
Type Designator: 2N3827 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
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2N3827 datasheet
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2N3820 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage -20 V VG... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor TO-92 G H Emitter Base Collector J A D Collector B Millimeter REF. Min. Max. A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0... See More ⇒
Detailed specifications: 2N3816, 2N3816A, 2N3817, 2N3817A, 2N3818, 2N382, 2N3825, 2N3826, S8550, 2N3828, 2N3829, 2N383, 2N3830, 2N3830L, 2N3831, 2N3832, 2N3833
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BJT Parameters and How They Relate
History: 2N3817A
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