2N384-33 Datasheet. Specs and Replacement

Type Designator: 2N384-33  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO33-1

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2N384-33 datasheet

 9.1. Size:659K  rca

 2n384.pdf pdf_icon

2N384-33

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 9.2. Size:67K  microsemi

 2n3846 2n3847.pdf pdf_icon

2N384-33

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level JAN 2N3846 2N3847 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3846 2N3847 Units Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 300 400 Vdc VCBO Emitter-Base Voltage 10 Vdc VEBO Collector Current 20 Adc IC Total Power Dissipation @ T = +250C (... See More ⇒

Detailed specifications: 2N3838, 2N3839, 2N384, 2N3840, 2N3841, 2N3842, 2N3842A, 2N3843, 2SA1015, 2N3843A, 2N3844, 2N3844A, 2N3845, 2N3845A, 2N3846, 2N3847, 2N3848

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