All Transistors. 2N384-33 Datasheet

 

2N384-33 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N384-33
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.12 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO33-1

 2N384-33 Transistor Equivalent Substitute - Cross-Reference Search

   

2N384-33 Datasheet (PDF)

 9.1. Size:659K  rca
 2n384.pdf

2N384-33

 9.2. Size:67K  microsemi
 2n3846 2n3847.pdf

2N384-33 2N384-33

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level JAN 2N3846 2N3847 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3846 2N3847 Units Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 300 400 Vdc VCBO Emitter-Base Voltage 10 Vdc VEBO Collector Current 20 Adc IC Total Power Dissipation @ T = +250C (

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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