2N3859 Datasheet and Replacement
Type Designator: 2N3859
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
2N3859 Datasheet (PDF)
2n3711 2n3721 2n3827 2n3858 2n3858a 2n3859 2n3859a 2n3860 2n3877 2n3877a 2n3900 2n3900a 2n3901 2n3903 2n3904 2n3905.pdf

2n3859a.pdf

2N3859ANPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO C
Datasheet: 2N3854A , 2N3855 , 2N3855A , 2N3856 , 2N3856A , 2N3857 , 2N3858 , 2N3858A , TIP41C , 2N3859A , 2N385A , 2N386 , 2N3860 , 2N3860A , 2N3861 , 2N3862 , 2N3863 .
History: MJH16018 | PN4354 | 40915 | KRA725U | 2SAB42 | 2SC1732 | 2SA1238
Keywords - 2N3859 transistor datasheet
2N3859 cross reference
2N3859 equivalent finder
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History: MJH16018 | PN4354 | 40915 | KRA725U | 2SAB42 | 2SC1732 | 2SA1238



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