All Transistors. 2N3859 Datasheet

 

2N3859 Datasheet and Replacement


   Type Designator: 2N3859
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
      - BJT Cross-Reference Search

   

2N3859 Datasheet (PDF)

 0.1. Size:58K  fairchild semi
2n3859a.pdf pdf_icon

2N3859

2N3859ANPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO C

 9.1. Size:154K  no
2n3858.pdf pdf_icon

2N3859

Datasheet: 2N3854A , 2N3855 , 2N3855A , 2N3856 , 2N3856A , 2N3857 , 2N3858 , 2N3858A , TIP41C , 2N3859A , 2N385A , 2N386 , 2N3860 , 2N3860A , 2N3861 , 2N3862 , 2N3863 .

History: MJH16018 | PN4354 | 40915 | KRA725U | 2SAB42 | 2SC1732 | 2SA1238

Keywords - 2N3859 transistor datasheet

 2N3859 cross reference
 2N3859 equivalent finder
 2N3859 lookup
 2N3859 substitution
 2N3859 replacement

 

 
Back to Top

 


 
.