All Transistors. KSD227O Datasheet

 

KSD227O Datasheet and Replacement


   Type Designator: KSD227O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
 

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KSD227O Datasheet (PDF)

 8.1. Size:40K  fairchild semi
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KSD227O

KSD227Low Frequency Power Amplifier Complement to KSA642 Collector Power Dissipation : PC=400mWTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Curre

Datasheet: KSD1943 , KSD1944 , KSD2012 , KSD2012G , KSD2012Y , KSD2058 , KSD227 , KSD227G , 2SD669A , KSD227Y , KSD261 , KSD261G , KSD261O , KSD261R , KSD261Y , KSD288 , KSD288O .

Keywords - KSD227O transistor datasheet

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