All Transistors. KSD401O Datasheet

 

KSD401O Datasheet and Replacement


   Type Designator: KSD401O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220
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KSD401O Datasheet (PDF)

 8.1. Size:71K  fairchild semi
 ksd401.pdf pdf_icon

KSD401O

KSD401TV Vertical Deflection Output Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W(TC=25C) Complement to KSB546TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-

 8.2. Size:104K  inchange semiconductor
 ksd401.pdf pdf_icon

KSD401O

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD401 DESCRIPTION Collector-Base Breakdown Voltage- : V(BR)CBO= 200V(Min) Collector Current- IC= 2A Collector Power Dissipation- : PC= 25W@ TC= 25 Complement to Type KSB546 APPLICATIONS Designed for TV Vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RT2P01M | MJE3302 | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | 2SD505

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