KSE210 Datasheet. Specs and Replacement

Type Designator: KSE210  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Collector Capacitance (Cc): 120 pF

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO126

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KSE210 datasheet

 ..1. Size:42K  fairchild semi

 kse210.pdf pdf_icon

KSE210

KSE210 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz@IC= -100mA (Min.) Complement to KSE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2... See More ⇒

 ..2. Size:53K  samsung

 kse210.pdf pdf_icon

KSE210

KSE210 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION TO-126 SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65 I = -100 C Complement to KSE200 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter- Base Voltage VEBO -8 V Co... See More ⇒

Detailed specifications: KSE13009F, KSE170, KSE171, KSE172, KSE180, KSE181, KSE182, KSE200, 2SC5200, KSE2955T, KSE3055T, KSE340, KSE350, KSE44H-1, KSE44H-10, KSE44H-11, KSE44H-2

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