All Transistors. KSP12 Datasheet

 

KSP12 Datasheet and Replacement


   Type Designator: KSP12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20000
   Noise Figure, dB: -
   Package: TO92
 

 KSP12 Substitution

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KSP12 Datasheet (PDF)

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KSP12

KSP12Darlington Transistor Collector-Emitter Voltage: VCES=20V Collector Power Dissipation: PC (max)=625mWTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 10 VPC Collector Power Dissipation

Datasheet: KSH45H11I , KSH47 , KSH47I , KSH50 , KSH50I , KSP05 , KSP06 , KSP10 , TIP32C , KSP13 , KSP14 , KSP17 , KSP20 , KSP2222 , KSP2222A , KSP24 , KSP25 .

Keywords - KSP12 transistor datasheet

 KSP12 cross reference
 KSP12 equivalent finder
 KSP12 lookup
 KSP12 substitution
 KSP12 replacement

 

 
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