KSP12 PDF Specs and Replacement
Type Designator: KSP12
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20000
Noise Figure, dB: -
Package: TO92
KSP12 Substitution
KSP12 PDF detailed specifications
ksp12.pdf
KSP12 Darlington Transistor Collector-Emitter Voltage VCES=20V Collector Power Dissipation PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 10 V PC Collector Power Dissipation ... See More ⇒
Detailed specifications: KSH45H11I , KSH47 , KSH47I , KSH50 , KSH50I , KSP05 , KSP06 , KSP10 , 431 , KSP13 , KSP14 , KSP17 , KSP20 , KSP2222 , KSP2222A , KSP24 , KSP25 .
Keywords - KSP12 pdf specs
KSP12 cross reference
KSP12 equivalent finder
KSP12 pdf lookup
KSP12 substitution
KSP12 replacement
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b | 2n3054 transistor equivalent | 2n554 | 2sa1011 | 2sa1283


