KSP12 Datasheet. Specs and Replacement

Type Designator: KSP12  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20000

Noise Figure, dB: -

Package: TO92

  📄📄 Copy 

 KSP12 Substitution

- BJT ⓘ Cross-Reference Search

 

KSP12 datasheet

 ..1. Size:33K  fairchild semi

 ksp12.pdf pdf_icon

KSP12

KSP12 Darlington Transistor Collector-Emitter Voltage VCES=20V Collector Power Dissipation PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 10 V PC Collector Power Dissipation ... See More ⇒

Detailed specifications: KSH45H11I, KSH47, KSH47I, KSH50, KSH50I, KSP05, KSP06, KSP10, 431, KSP13, KSP14, KSP17, KSP20, KSP2222, KSP2222A, KSP24, KSP25

Keywords - KSP12 pdf specs

 KSP12 cross reference

 KSP12 equivalent finder

 KSP12 pdf lookup

 KSP12 substitution

 KSP12 replacement