KTB817 Datasheet. Specs and Replacement
Type Designator: KTB817 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO3P
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KTB817 datasheet
SEMICONDUCTOR KTB817 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to KTD1047. Recommended for 60W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RATING... See More ⇒
SEMICONDUCTOR KTB817B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047B. Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -160 V Collector-Base Voltage VCEO -140 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -6 V IC DC -12 C... See More ⇒
Detailed specifications: KTB1369, KTB1370, KTB1423, KTB1424, KTB2955, KTB595, KTB688, KTB778, 2N3055, KTB988, KTB989, KTC1001, KTC1003, KTC1006, KTC1008, KTC1020, KTC1026
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