All Transistors. KTB817 Datasheet

 

KTB817 Datasheet and Replacement


   Type Designator: KTB817
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3P
 

 KTB817 Substitution

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KTB817 Datasheet (PDF)

 ..1. Size:392K  kec
 ktb817.pdf pdf_icon

KTB817

SEMICONDUCTOR KTB817TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Complementary to KTD1047.Recommended for 60W Audio Frequency DIM MILLIMETERSAmplifier Output Stage.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RATING

 0.1. Size:688K  kec
 ktb817b.pdf pdf_icon

KTB817

SEMICONDUCTOR KTB817BTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047B.Recommended for 60W Audio Frequency Amplifier Output Stage.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -160 VCollector-Base VoltageVCEO -140 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -6 VICDC -12C

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

Keywords - KTB817 transistor datasheet

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