KTD998 Datasheet. Specs and Replacement

Type Designator: KTD998  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO3P

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KTD998 datasheet

 ..1. Size:52K  kec

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KTD998

SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. DIM MILLIMETERS FEATURES A 16.30 MAX A C _ + B 12.00 0.30 R Recommended for 45 50W Audio Frequency _ + C 5.50 0.20 W W U D 1.20 MAX Amplifier Output Stage. E 8.00 V F 5.00 Complementary to KTB778. _ + G 17.00 0.30 H 0.60+0.15/-0.10 I 2.50 _ + J 20.0 0.1 I M ... See More ⇒

 ..2. Size:223K  inchange semiconductor

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KTD998

isc Silicon NPN Power Transistor KTD998 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type KTB778 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLU... See More ⇒

Detailed specifications: KTD2066, KTD2092, KTD2424, KTD3055, KTD525, KTD686, KTD718, KTD863, MJE340, KTN2222, KTN2222A, KTN2222AS, KTN2222S, KTN2369, KTN2369A, KTN2369S, KTN2369U

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