All Transistors. KTD998 Datasheet

 

KTD998 Datasheet, Equivalent, Cross Reference Search

Type Designator: KTD998

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO3P

KTD998 Transistor Equivalent Substitute - Cross-Reference Search

 

KTD998 Datasheet (PDF)

1.1. ktd998.pdf Size:52K _kec

KTD998
KTD998

SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. DIM MILLIMETERS FEATURES A 16.30 MAX A C _ + B 12.00 0.30 R ·Recommended for 45∼50W Audio Frequency _ + C 5.50 0.20 W W U D 1.20 MAX Amplifier Output Stage. E 8.00 V F 5.00 ·Complementary to KTB778. _ + G 17.00 0.30 H 0.60+0.15/-0.10 I 2.50 _ + J 20.0 0.1 I M

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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