All Transistors. KTD998 Datasheet

 

KTD998 Datasheet and Replacement


   Type Designator: KTD998
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO3P
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KTD998 Datasheet (PDF)

 ..1. Size:52K  kec
 ktd998.pdf pdf_icon

KTD998

SEMICONDUCTOR KTD998TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.DIM MILLIMETERSFEATURES A 16.30 MAXA C_+B 12.00 0.30RRecommended for 4550W Audio Frequency _+C 5.50 0.20WWU D 1.20 MAXAmplifier Output Stage.E 8.00VF 5.00Complementary to KTB778._+G 17.00 0.30H 0.60+0.15/-0.10I 2.50_+J 20.0 0.1IM

 ..2. Size:223K  inchange semiconductor
 ktd998.pdf pdf_icon

KTD998

isc Silicon NPN Power Transistor KTD998DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type KTB778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLU

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NB222ZY

Keywords - KTD998 transistor datasheet

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