KTD998 Specs and Replacement
Type Designator: KTD998
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO3P
KTD998 Substitution
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KTD998 datasheet
SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. DIM MILLIMETERS FEATURES A 16.30 MAX A C _ + B 12.00 0.30 R Recommended for 45 50W Audio Frequency _ + C 5.50 0.20 W W U D 1.20 MAX Amplifier Output Stage. E 8.00 V F 5.00 Complementary to KTB778. _ + G 17.00 0.30 H 0.60+0.15/-0.10 I 2.50 _ + J 20.0 0.1 I M ... See More ⇒
isc Silicon NPN Power Transistor KTD998 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type KTB778 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLU... See More ⇒
Detailed specifications: KTD2066 , KTD2092 , KTD2424 , KTD3055 , KTD525 , KTD686 , KTD718 , KTD863 , S8550 , KTN2222 , KTN2222A , KTN2222AS , KTN2222S , KTN2369 , KTN2369A , KTN2369S , KTN2369U .
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