ME1001 Datasheet. Specs and Replacement

Type Designator: ME1001  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Max. Operating Junction Temperature (Tj): 165 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO106

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ME1001 datasheet

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ME1001

ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME100N03T-G is the N-Channel logic enhancement mode RDS(ON) 3m @VGS=10V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is especially Exceptional on-resistance... See More ⇒

Detailed specifications: ME0463, ME0475, ME0491, ME0492, ME0493, ME0801, ME0802, ME0803, TIP41C, ME1002, ME1075, ME1100, ME1120, ME2001, ME2002, ME3001, ME3002

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