ME1100 Datasheet. Specs and Replacement

Type Designator: ME1100  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 165 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO106

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ME1100 datasheet

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 me110n10t me110n10f.pdf pdf_icon

ME1100

ME110N10T/ME110N10F N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6.2m @VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h... See More ⇒

Detailed specifications: ME0492, ME0493, ME0801, ME0802, ME0803, ME1001, ME1002, ME1075, 2N2222, ME1120, ME2001, ME2002, ME3001, ME3002, ME3011, ME4001, ME4002

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