ME1100 Datasheet, Equivalent, Cross Reference Search
Type Designator: ME1100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO106
ME1100 Transistor Equivalent Substitute - Cross-Reference Search
ME1100 Datasheet (PDF)
9.1. Size:705K matsuki electric
me110n10t me110n10f.pdf
me110n10t me110n10f.pdf
ME110N10T/ME110N10FN-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.2m@VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD598
