All Transistors. ME1100 Datasheet

 

ME1100 Datasheet and Replacement


   Type Designator: ME1100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO106
 

 ME1100 Substitution

   - BJT ⓘ Cross-Reference Search

   

ME1100 Datasheet (PDF)

 9.1. Size:705K  matsuki electric
 me110n10t me110n10f.pdf pdf_icon

ME1100

ME110N10T/ME110N10FN-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.2m@VGS=10V The ME110N10T and ME110N10F is the N-Channel logic enhancement Super high density cell design for extremely low RDS(ON) mode power field effect transistors, using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This h

Datasheet: ME0492 , ME0493 , ME0801 , ME0802 , ME0803 , ME1001 , ME1002 , ME1075 , C1815 , ME1120 , ME2001 , ME2002 , ME3001 , ME3002 , ME3011 , ME4001 , ME4002 .

Keywords - ME1100 transistor datasheet

 ME1100 cross reference
 ME1100 equivalent finder
 ME1100 lookup
 ME1100 substitution
 ME1100 replacement

 

 
Back to Top

 


 
.