ME2001 Datasheet, Equivalent, Cross Reference Search
Type Designator: ME2001
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO106
ME2001 Transistor Equivalent Substitute - Cross-Reference Search
ME2001 Datasheet (PDF)
9.1. Size:759K matsuki electric
me200n04t me200n04t-g.pdf
me200n04t me200n04t-g.pdf
ME200N04T / ME200N04T-GN- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)3.5m@VGS=10V The ME200N04T is the N-Channel logic enhancement mode power RDS(ON)4.7m@VGS=5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
