All Transistors. ME2001 Datasheet

 

ME2001 Datasheet and Replacement


   Type Designator: ME2001
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO106
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ME2001 Datasheet (PDF)

 9.1. Size:759K  matsuki electric
 me200n04t me200n04t-g.pdf pdf_icon

ME2001

ME200N04T / ME200N04T-GN- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)3.5m@VGS=10V The ME200N04T is the N-Channel logic enhancement mode power RDS(ON)4.7m@VGS=5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: HMJE13007A | DSA7503 | 2N6220 | 2SB337H | 2N5316 | KTC4075-BL | ZTX331K

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