ME2001 Datasheet. Specs and Replacement

Type Designator: ME2001  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 165 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO106

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ME2001 datasheet

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 me200n04t me200n04t-g.pdf pdf_icon

ME2001

ME200N04T / ME200N04T-G N- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 3.5m @VGS=10V The ME200N04T is the N-Channel logic enhancement mode power RDS(ON) 4.7m @VGS=5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec... See More ⇒

Detailed specifications: ME0801, ME0802, ME0803, ME1001, ME1002, ME1075, ME1100, ME1120, C945, ME2002, ME3001, ME3002, ME3011, ME4001, ME4002, ME4003, ME4101

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