All Transistors. ME2002 Datasheet

 

ME2002 Datasheet and Replacement


   Type Designator: ME2002
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO106
 

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ME2002 Datasheet (PDF)

 9.1. Size:759K  matsuki electric
 me200n04t me200n04t-g.pdf pdf_icon

ME2002

ME200N04T / ME200N04T-GN- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)3.5m@VGS=10V The ME200N04T is the N-Channel logic enhancement mode power RDS(ON)4.7m@VGS=5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

Datasheet: ME0802 , ME0803 , ME1001 , ME1002 , ME1075 , ME1100 , ME1120 , ME2001 , 2N2222 , ME3001 , ME3002 , ME3011 , ME4001 , ME4002 , ME4003 , ME4101 , ME4102 .

History: 2SC4377

Keywords - ME2002 transistor datasheet

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