ME2002 Datasheet, Equivalent, Cross Reference Search
Type Designator: ME2002
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO106
ME2002 Transistor Equivalent Substitute - Cross-Reference Search
ME2002 Datasheet (PDF)
9.1. Size:759K matsuki electric
me200n04t me200n04t-g.pdf
me200n04t me200n04t-g.pdf
ME200N04T / ME200N04T-GN- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)3.5m@VGS=10V The ME200N04T is the N-Channel logic enhancement mode power RDS(ON)4.7m@VGS=5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
