ME4101 Datasheet. Specs and Replacement
Type Designator: ME4101 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 165 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO106
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ME4101 datasheet
February 2010 FDME410NZT N-Channel PowerTrench MOSFET 20 V, 7 A, 26 m Features General Description This Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 A Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 A optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39... See More ⇒
Detailed specifications: ME2001, ME2002, ME3001, ME3002, ME3011, ME4001, ME4002, ME4003, S8050, ME4102, ME4103, ME4104, ME501, ME502, ME503, ME511, ME512
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