All Transistors. ME4101 Datasheet

 

ME4101 Datasheet and Replacement


   Type Designator: ME4101
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO106
 

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ME4101 Datasheet (PDF)

 9.1. Size:299K  fairchild semi
 fdme410nzt.pdf pdf_icon

ME4101

February 2010FDME410NZTN-Channel PowerTrench MOSFET 20 V, 7 A, 26 mFeatures General DescriptionThis Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 AFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 Aoptimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39

Datasheet: ME2001 , ME2002 , ME3001 , ME3002 , ME3011 , ME4001 , ME4002 , ME4003 , BD140 , ME4102 , ME4103 , ME4104 , ME501 , ME502 , ME503 , ME511 , ME512 .

History: 2T951A | PBF259 | DTA143ESA | KT914A | MRF401 | DDTA114ECA

Keywords - ME4101 transistor datasheet

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