All Transistors. ME4101 Datasheet

 

ME4101 Datasheet and Replacement


   Type Designator: ME4101
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO106
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ME4101 Datasheet (PDF)

 9.1. Size:299K  fairchild semi
 fdme410nzt.pdf pdf_icon

ME4101

February 2010FDME410NZTN-Channel PowerTrench MOSFET 20 V, 7 A, 26 mFeatures General DescriptionThis Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 AFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 Aoptimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: JE5401A | KTC2553 | SS2503A | GS109B | KC147 | BRMJE172D | 2N25551

Keywords - ME4101 transistor datasheet

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