All Transistors. ME4104 Datasheet

 

ME4104 Datasheet and Replacement


   Type Designator: ME4104
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO106
 

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ME4104 Datasheet (PDF)

 9.1. Size:299K  fairchild semi
 fdme410nzt.pdf pdf_icon

ME4104

February 2010FDME410NZTN-Channel PowerTrench MOSFET 20 V, 7 A, 26 mFeatures General DescriptionThis Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 AFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 Aoptimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39

Datasheet: ME3002 , ME3011 , ME4001 , ME4002 , ME4003 , ME4101 , ME4102 , ME4103 , TIP3055 , ME501 , ME502 , ME503 , ME511 , ME512 , ME513 , ME5308 , ME6001 .

History: 2SA219 | 2SC101 | 2SC1124-1 | 2SC5358 | CP754 | BF871 | CZTA28

Keywords - ME4104 transistor datasheet

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