ME4104 Datasheet. Specs and Replacement

Type Designator: ME4104  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Max. Operating Junction Temperature (Tj): 165 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO106

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ME4104 datasheet

 9.1. Size:299K  fairchild semi

 fdme410nzt.pdf pdf_icon

ME4104

February 2010 FDME410NZT N-Channel PowerTrench MOSFET 20 V, 7 A, 26 m Features General Description This Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 A Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 A optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39... See More ⇒

Detailed specifications: ME3002, ME3011, ME4001, ME4002, ME4003, ME4101, ME4102, ME4103, A1015, ME501, ME502, ME503, ME511, ME512, ME513, ME5308, ME6001

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