ME501 Datasheet. Specs and Replacement

Type Designator: ME501  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 165 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO106

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ME501 datasheet

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ME501

This product complies with the RoHS Directive (EU 2002/95/EC). DME50101 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification DME20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Co... See More ⇒

Detailed specifications: ME3011, ME4001, ME4002, ME4003, ME4101, ME4102, ME4103, ME4104, 13007, ME502, ME503, ME511, ME512, ME513, ME5308, ME6001, ME6002

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