ME501 Datasheet, Equivalent, Cross Reference Search
Type Designator: ME501
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO106
ME501 Transistor Equivalent Substitute - Cross-Reference Search
ME501 Datasheet (PDF)
0.1. Size:526K panasonic
dme50101.pdf
dme50101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DME50101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Co
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
