All Transistors. MJ13100 Datasheet

 

MJ13100 Datasheet and Replacement


   Type Designator: MJ13100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 650 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 450 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3
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MJ13100 Datasheet (PDF)

 ..1. Size:209K  inchange semiconductor
 mj13100 mj13101.pdf pdf_icon

MJ13100

isc Silicon NPN Power Transistors MJ13100/13101DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13100CEO(SUS)= 450V(Min)MJ13101High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuits

 ..2. Size:187K  inchange semiconductor
 mj13100 13101.pdf pdf_icon

MJ13100

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13100 = 450V(Min)MJ13101 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MUN2213LT2 | AD133-5 | GD203 | RCA8350B | MMS8550 | CD9011F | UN9110S

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