MJ13100 Datasheet. Specs and Replacement

Type Designator: MJ13100  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 650 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 450 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

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MJ13100 datasheet

 ..1. Size:209K  inchange semiconductor

 mj13100 mj13101.pdf pdf_icon

MJ13100

isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13100 CEO(SUS) = 450V(Min) MJ13101 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ... See More ⇒

 ..2. Size:187K  inchange semiconductor

 mj13100 13101.pdf pdf_icon

MJ13100

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13100 = 450V(Min) MJ13101 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su... See More ⇒

Detailed specifications: MJ13014, MJ13015, MJ13070, MJ13071, MJ13080, MJ13081, MJ13090, MJ13091, BC549, MJ13101, MJ13330, MJ13331, MJ13332, MJ13333, MJ13334, MJ13335, MJ14000

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