MJ13100 Specs and Replacement
Type Designator: MJ13100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 450 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO3
MJ13100 Substitution
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MJ13100 datasheet
isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13100 CEO(SUS) = 450V(Min) MJ13101 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13100 = 450V(Min) MJ13101 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su... See More ⇒
Detailed specifications: MJ13014 , MJ13015 , MJ13070 , MJ13071 , MJ13080 , MJ13081 , MJ13090 , MJ13091 , BC639 , MJ13101 , MJ13330 , MJ13331 , MJ13332 , MJ13333 , MJ13334 , MJ13335 , MJ14000 .
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Keywords - MJ13100 pdf specs
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