MJ13100 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ13100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 450 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO3
MJ13100 Transistor Equivalent Substitute - Cross-Reference Search
MJ13100 Datasheet (PDF)
mj13100 mj13101.pdf
isc Silicon NPN Power Transistors MJ13100/13101DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13100CEO(SUS)= 450V(Min)MJ13101High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuits
mj13100 13101.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13100 = 450V(Min)MJ13101 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MJ2865
