All Transistors. MJ13101 Datasheet

 

MJ13101 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ13101
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 750 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 450 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3

 MJ13101 Transistor Equivalent Substitute - Cross-Reference Search

   

MJ13101 Datasheet (PDF)

 ..1. Size:209K  inchange semiconductor
mj13100 mj13101.pdf

MJ13101 MJ13101

isc Silicon NPN Power Transistors MJ13100/13101DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13100CEO(SUS)= 450V(Min)MJ13101High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuits

 8.1. Size:187K  inchange semiconductor
mj13100 13101.pdf

MJ13101 MJ13101

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13100 = 450V(Min)MJ13101 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: FE2223A | 3DD13002_B1 | 2N5035

 

 
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