All Transistors. MJ13101 Datasheet

 

MJ13101 Datasheet and Replacement


   Type Designator: MJ13101
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 750 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 450 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3
 

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MJ13101 Datasheet (PDF)

 ..1. Size:209K  inchange semiconductor
 mj13100 mj13101.pdf pdf_icon

MJ13101

isc Silicon NPN Power Transistors MJ13100/13101DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 400V(Min)MJ13100CEO(SUS)= 450V(Min)MJ13101High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuits

 8.1. Size:187K  inchange semiconductor
 mj13100 13101.pdf pdf_icon

MJ13101

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)MJ13100 = 450V(Min)MJ13101 High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su

Datasheet: MJ13015 , MJ13070 , MJ13071 , MJ13080 , MJ13081 , MJ13090 , MJ13091 , MJ13100 , BC549 , MJ13330 , MJ13331 , MJ13332 , MJ13333 , MJ13334 , MJ13335 , MJ14000 , MJ14001 .

History: 13005ED

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