MJ13101 PDF and Equivalents Search

 

MJ13101 Specs and Replacement

Type Designator: MJ13101

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 750 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 450 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

 MJ13101 Substitution

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MJ13101 datasheet

 ..1. Size:209K  inchange semiconductor

 mj13100 mj13101.pdf pdf_icon

MJ13101

isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) MJ13100 CEO(SUS) = 450V(Min) MJ13101 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits ... See More ⇒

 8.1. Size:187K  inchange semiconductor

 mj13100 13101.pdf pdf_icon

MJ13101

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13100/13101 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min) MJ13100 = 450V(Min) MJ13101 High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly su... See More ⇒

Detailed specifications: MJ13015 , MJ13070 , MJ13071 , MJ13080 , MJ13081 , MJ13090 , MJ13091 , MJ13100 , 2SD669 , MJ13330 , MJ13331 , MJ13332 , MJ13333 , MJ13334 , MJ13335 , MJ14000 , MJ14001 .

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