MJ423 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ423
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
MJ423 Transistor Equivalent Substitute - Cross-Reference Search
MJ423 Datasheet (PDF)
mj423.pdf
isc Silicon NPN Power Transistor MJ423DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 325V(Min.)CEO(SUS)DC Current Gain-: h = 30-90@ I = 1AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium to high voltage inverters, converters,regulators and switching circuits.ABSOLUTE MAXIMUM RATINGS
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: D7B2