All Transistors. 2N1114 Datasheet

 

2N1114 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N1114

Material of Transistor: Ge

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO5

2N1114 Transistor Equivalent Substitute - Cross-Reference Search

 

2N1114 Datasheet (PDF)

9.1. fdfm2n111.pdf Size:286K _fairchild_semi

2N1114
2N1114

August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack

Datasheet: 2N1107 , 2N1108 , 2N1109 , 2N111 , 2N1110 , 2N1111 , 2N1111A , 2N1111B , BC108 , 2N1115 , 2N1115A , 2N1116 , 2N1117 , 2N1118 , 2N1118A , 2N1119 , 2N111A .

 

 
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