2N1114 PDF Specs and Replacement
Type Designator: 2N1114
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N1114 Substitution
2N1114 PDF detailed specifications
fdfm2n111.pdf
August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single pack... See More ⇒
Detailed specifications: 2N1107 , 2N1108 , 2N1109 , 2N111 , 2N1110 , 2N1111 , 2N1111A , 2N1111B , C5198 , 2N1115 , 2N1115A , 2N1116 , 2N1117 , 2N1118 , 2N1118A , 2N1119 , 2N111A .
History: PN3416
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