2N1114 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1114
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N1114 Transistor Equivalent Substitute - Cross-Reference Search
2N1114 Datasheet (PDF)
9.1. Size:286K fairchild semi
fdfm2n111.pdf
fdfm2n111.pdf
August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack
Datasheet: 2N1107 , 2N1108 , 2N1109 , 2N111 , 2N1110 , 2N1111 , 2N1111A , 2N1111B , 2N3904 , 2N1115 , 2N1115A , 2N1116 , 2N1117 , 2N1118 , 2N1118A , 2N1119 , 2N111A .
