2N1114 Datasheet. Specs and Replacement

Type Designator: 2N1114  📄📄 

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO5

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2N1114 datasheet

 9.1. Size:286K  fairchild semi

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2N1114

August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single pack... See More ⇒

Detailed specifications: 2N1107, 2N1108, 2N1109, 2N111, 2N1110, 2N1111, 2N1111A, 2N1111B, C5198, 2N1115, 2N1115A, 2N1116, 2N1117, 2N1118, 2N1118A, 2N1119, 2N111A

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