2N4576 Datasheet. Specs and Replacement
Type Designator: 2N4576 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
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2N4576 datasheet
isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: 2N451, 2N452, 2N453, 2N454, 2N456, 2N456A, 2N456B, 2N457, BD333, 2N457A, 2N457B, 2N458, 2N458A, 2N458B, 2N459, 2N459A, 2N45A
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BJT Parameters and How They Relate
History: 2N476
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