2N4576 Datasheet. Specs and Replacement

Type Designator: 2N4576  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3

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2N4576 datasheet

 ..1. Size:182K  inchange semiconductor

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2N4576

isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

Detailed specifications: 2N451, 2N452, 2N453, 2N454, 2N456, 2N456A, 2N456B, 2N457, BD333, 2N457A, 2N457B, 2N458, 2N458A, 2N458B, 2N459, 2N459A, 2N45A

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