2N4576 Specs and Replacement
Type Designator: 2N4576
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
2N4576 Substitution
2N4576 detailed specifications
2n4576.pdf
isc Silicon NPN Power Transistor 2N4576 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: 2N451 , 2N452 , 2N453 , 2N454 , 2N456 , 2N456A , 2N456B , 2N457 , BDT88 , 2N457A , 2N457B , 2N458 , 2N458A , 2N458B , 2N459 , 2N459A , 2N45A .
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