MT200 Datasheet. Specs and Replacement

Type Designator: MT200  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 165 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: X016

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MT200 datasheet

 0.1. Size:213K  nxp

 pmt200en.pdf pdf_icon

MT200

PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo... See More ⇒

 0.2. Size:286K  nxp

 pmt200epe.pdf pdf_icon

MT200

PMT200EPE 70 V, P-channel Trench MOSFET 14 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic D... See More ⇒

Detailed specifications: MT0462, MT0463, MT0491, MT0492, MT0493, MT1075, MT1100, MT146, 2N2222A, MT3001, MT3002, MT3011, MT4101, MT4102, MT4103, MT4104, MT6001

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