All Transistors. MT200 Datasheet

 

MT200 Datasheet and Replacement


   Type Designator: MT200
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 165 °C
   Transition Frequency (ft): 90 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: X016
 

 MT200 Substitution

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MT200 Datasheet (PDF)

 0.1. Size:213K  nxp
 pmt200en.pdf pdf_icon

MT200

PMT200EN100 V N-channel Trench MOSFET25 October 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo

 0.2. Size:286K  nxp
 pmt200epe.pdf pdf_icon

MT200

PMT200EPE70 V, P-channel Trench MOSFET14 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic D

Datasheet: MT0462 , MT0463 , MT0491 , MT0492 , MT0493 , MT1075 , MT1100 , MT146 , 2SD1047 , MT3001 , MT3002 , MT3011 , MT4101 , MT4102 , MT4103 , MT4104 , MT6001 .

History: MMBTA06L | NSVMUN2212T1G | BCW92B | GFT31-15 | FSB619 | SRA2207U | 2SC4414

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