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2N4950 Specs and Replacement


   Type Designator: 2N4950
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 70 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO114
 

 2N4950 Substitution

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2N4950 detailed specifications

 9.1. Size:60K  fairchild semi
 2n4953.pdf pdf_icon

2N4950

2N4953 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C... See More ⇒

 9.2. Size:43K  semicoa
 2n4957.pdf pdf_icon

2N4950

Data Sheet No. 2N4957 Generic Part Number Type 2N4957 2N4957 Geometry 0006 Polarity PNP REF MIL-PRF-19500/426 Qual Level JAN - JANS Features Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 ... See More ⇒

 9.3. Size:1285K  sprague
 2n4265 2n4400 2n4401 2n4402 2n4403 2n4409 2n4410 2n4424 2n4425 2n4951 2n4952 2n4953 2n4954 2n5087 2n5088 2n5089.pdf pdf_icon

2N4950

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Detailed specifications: 2N4940 , 2N4941 , 2N4942 , 2N4943 , 2N4944 , 2N4945 , 2N4946 , 2N495 , 2SC4793 , 2N4951 , 2N495-18 , 2N4952 , 2N4953 , 2N4954 , 2N4955 , 2N4955-78 , 2N4956 .

History: BC289A

Keywords - 2N4950 transistor specs

 2N4950 cross reference
 2N4950 equivalent finder
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