All Transistors. 2N4950 Datasheet


2N4950 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N4950

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 70 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 0.1 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO114

2N4950 Transistor Equivalent Substitute - Cross-Reference Search


2N4950 Datasheet (PDF)

9.1. 2n4953.pdf Size:60K _fairchild_semi


2N4953 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. • Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C

9.2. 2n4957.pdf Size:43K _semicoa


Data Sheet No. 2N4957 Generic Part Number: Type 2N4957 2N4957 Geometry 0006 Polarity PNP REF: MIL-PRF-19500/426 Qual Level: JAN - JANS Features: • Small signal RF silicon transistor designed for high-gain, low-noise applications. • Housed in a TO-72 case. • Also available in chip form using the 0006 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/426

Datasheet: 2N4940 , 2N4941 , 2N4942 , 2N4943 , 2N4944 , 2N4945 , 2N4946 , 2N495 , 2N4401 , 2N4951 , 2N495-18 , 2N4952 , 2N4953 , 2N4954 , 2N4955 , 2N4955-78 , 2N4956 .


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