NTE100 Datasheet, Equivalent, Cross Reference Search
Type Designator: NTE100
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 24 V
Maximum Collector Current |Ic max|: 0.1 A
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
NTE100 Transistor Equivalent Substitute - Cross-Reference Search
NTE100 Datasheet (PDF)
9.1. Size:24K no
nte106.pdf
nte106.pdf
NTE106Silicon PNP TransistorSwitching TransistorAbsolute Maximum Ratings:CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15VCollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15VEmitterBase Voltage,
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
