STC5550 Datasheet. Specs and Replacement

Type Designator: STC5550  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO61

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STC5550 datasheet

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 stc5551f.pdf pdf_icon

STC5550

STC5551F NPN Silicon Transistor PIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage SOT-89 VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking Package Code N51 STC5551F SOT-89 YWW N51 DEVICE CODE, hF... See More ⇒

Detailed specifications: STC2100, STC2101, STC5080, STC5081, STC5082, STC5083, STC5084, STC5085, BC547B, STC5551, STC5552, STC5553, STC5554, STC5555, STC5606, STC5608, STC5648

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