UMA8N Datasheet. Specs and Replacement

Type Designator: UMA8N  📄📄 

SMD Transistor Code: A8

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SC88A SOT353

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UMA8N datasheet

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EMA8 / UMA8N / FMA8A Transistors Emitter common (dual digital transistors) EMA8 / UMA8N / FMA8A External dimensions (Units mm) Features 1) Two DTA114Y chips in a EMT or UMT or SMT EMA8 package. ( ) (3) 4 ( ) 2 (5) ( ) 1 1.2 1.6 Equivalent circuit EMA8 / UMA8N FMA8A (3) (2) (1) (3) (4) (5) ROHM EMT5 Each lead has same dimensions R1 R1 R1 R1 R2 R2 R2 R2 (4) (5)/(6) ... See More ⇒

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Detailed specifications: UMA11N, UMA1N, UMA2N, UMA3N, UMA4N, UMA5N, UMA6N, UMA7N, 2SD1047, UMA9N, UMB10N, UMB11N, UMB16N, UMB1N, UMB2N, UMB3N, UMB4N

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