UMA9N Datasheet. Specs and Replacement

Type Designator: UMA9N  📄📄 

SMD Transistor Code: A10

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC88A SOT353

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UMA9N datasheet

 ..1. Size:64K  rohm

 uma9n fma9a a10 sot23-5 sot353.pdf pdf_icon

UMA9N

UMA9N / FMA9A Transistors Digital transistor (Common Emitter Dual Transistors) UMA9N / FMA9N Features External dimensions (Units mm) 1) Two DTA114E chips in UMT and UMA9N FMA9A SMT packages. 2.9 0.2 2.0 0.2 1.1 +0.2 -0.1 1.9 0.2 0.9 0.1 1.3 0.1 2) Mounting cost and area can be cut 0.8 0.1 0.95 0.95 0.65 0.65 0.7 in half. (2) (3) (4) (5) (3) (1) 0 0.1 0 0.1 (... See More ⇒

 ..2. Size:136K  rohm

 uma9n uma9n fma9a.pdf pdf_icon

UMA9N

Digital transistor (Common Emitter Dual Transistors) UMA9N / FMA9A Features Dimensions (Unit mm) 1) Two DTA114E chips in UMT and SMT packages. UMA9N FMA9A 2) Mounting cost and area can be cut in half. 2.9 0.2 2.0 0.2 1.1 +0.2 -0.1 1.9 0.2 0.9 0.1 1.3 0.1 0.8 0.1 0.95 0.95 0.65 0.65 0.7 (2) (3) (4) (5) (3) (1) 0 0.1 Structure 0 0.1 Epitaxial planar ... See More ⇒

Detailed specifications: UMA1N, UMA2N, UMA3N, UMA4N, UMA5N, UMA6N, UMA7N, UMA8N, 2SC2073, UMB10N, UMB11N, UMB16N, UMB1N, UMB2N, UMB3N, UMB4N, UMB5N

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