UMB1N Datasheet. Specs and Replacement

Type Designator: UMB1N  📄📄 

SMD Transistor Code: B1

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: SC-88

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UMB1N datasheet

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UMB1N

UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A Transistors General purpose (dual digital transistors) UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A External dimensions (Units mm) Features 1) Two DTA124E chips in a UMT or SMT package. UMA1N 1.25 Absolute maximum ratings (Ta = 25 C) 2.1 Parameter Symbol Limits Unit Supply voltage VCC -50 V 0.1Min. -40 Input voltage VIN V ROHM ... See More ⇒

Detailed specifications: UMA5N, UMA6N, UMA7N, UMA8N, UMA9N, UMB10N, UMB11N, UMB16N, S8550, UMB2N, UMB3N, UMB4N, UMB5N, UMB6N, MMUN2235LT1G, UMB8N, UMB9N

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