UMB1N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMB1N
SMD Transistor Code: B1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: SC-88
UMB1N Transistor Equivalent Substitute - Cross-Reference Search
UMB1N Datasheet (PDF)
umb1n imb1a b1 sot363 sot23-6.pdf
UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5ATransistorsGeneral purpose (dual digital transistors)UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A External dimensions (Units : mm) Features1) Two DTA124E chips in a UMT or SMT package.UMA1N1.25 Absolute maximum ratings (Ta = 25C)2.1Parameter Symbol Limits UnitSupply voltage VCC -50 V0.1Min.-40Input voltage VIN V ROHM
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
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