UMB6N Datasheet. Specs and Replacement

Type Designator: UMB6N  📄📄 

SMD Transistor Code: B6

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SC-88

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UMB6N datasheet

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UMB6N

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UMB6N

EMB6 / UMB6N Transistors General purpose (dual digital transistors) EMB6 / UMB6N External dimensions (Unit mm) Feature 1) Two DTA144E chips in a EMT or UMT package. EMB6 (4) (3) ( ) ( ) 5 2 ( ) ( ) 6 1 1.2 Equivalent circuit 1.6 EMB6 / UMB6N (3) (2) (1) Each lead has same dimensions R1 ROHM EMT6 R2 R2 DTr1 DTr2 R1 R1=47k UMB6N R2=47k (4) (5) (6) ... See More ⇒

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UMB6N

EMB6 / UMB6N EMB6FHA / UMB6NFHA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC -50V (5) (4) (4) (1) (1) IC(MAX.) -100mA (2) (2) (3) (3) R1 47kW EMB6 UMB6N EMB6FHA UMB6NFHA R2 47kW (SC-107C) SOT-353 (SC-88) lFeatures lInner circui... See More ⇒

Detailed specifications: UMB10N, UMB11N, UMB16N, UMB1N, UMB2N, UMB3N, UMB4N, UMB5N, A940, MMUN2235LT1G, UMB8N, UMB9N, UMC1N, UMC2N, UMC3N, UMC4N, UMC5N

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