UMB6N Datasheet. Specs and Replacement
Type Designator: UMB6N 📄📄
SMD Transistor Code: B6
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SC-88
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UMB6N datasheet
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EMB6 / UMB6N Transistors General purpose (dual digital transistors) EMB6 / UMB6N External dimensions (Unit mm) Feature 1) Two DTA144E chips in a EMT or UMT package. EMB6 (4) (3) ( ) ( ) 5 2 ( ) ( ) 6 1 1.2 Equivalent circuit 1.6 EMB6 / UMB6N (3) (2) (1) Each lead has same dimensions R1 ROHM EMT6 R2 R2 DTr1 DTr2 R1 R1=47k UMB6N R2=47k (4) (5) (6) ... See More ⇒
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Detailed specifications: UMB10N, UMB11N, UMB16N, UMB1N, UMB2N, UMB3N, UMB4N, UMB5N, A940, MMUN2235LT1G, UMB8N, UMB9N, UMC1N, UMC2N, UMC3N, UMC4N, UMC5N
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