All Transistors. UMB6N Datasheet

 

UMB6N Datasheet and Replacement


   Type Designator: UMB6N
   SMD Transistor Code: B6
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 68
   Noise Figure, dB: -
   Package: SC-88
 

 UMB6N Substitution

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UMB6N Datasheet (PDF)

 ..1. Size:36K  rohm
 umb6n imb6a b6 sot363 sot23-6.pdf pdf_icon

UMB6N

UMB6N / IMBTransistorsTransistorsUMH6N / IMH

 ..2. Size:61K  rohm
 umb6-umb6n umb6n.pdf pdf_icon

UMB6N

EMB6 / UMB6N Transistors General purpose (dual digital transistors) EMB6 / UMB6N External dimensions (Unit : mm) Feature 1) Two DTA144E chips in a EMT or UMT package. EMB6(4) (3)( ) ( )5 2( ) ( )6 11.2 Equivalent circuit 1.6EMB6 / UMB6N(3) (2) (1)Each lead has same dimensionsR1ROHM : EMT6R2 R2DTr1DTr2R1R1=47kUMB6NR2=47k(4) (5) (6)

 0.1. Size:1233K  rohm
 umb6nfha.pdf pdf_icon

UMB6N

EMB6 / UMB6NEMB6FHA / UMB6NFHADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC-50V (5) (4) (4) (1) (1) IC(MAX.)-100mA (2) (2) (3) (3) R147kWEMB6 UMB6N EMB6FHA UMB6NFHAR247kW (SC-107C) SOT-353 (SC-88) lFeatures lInner circui

Datasheet: UMB10N , UMB11N , UMB16N , UMB1N , UMB2N , UMB3N , UMB4N , UMB5N , B772 , MMUN2235LT1G , UMB8N , UMB9N , UMC1N , UMC2N , UMC3N , UMC4N , UMC5N .

History: PZTA56 | 2SB222A | D32P1 | 2N419 | UMB11N | BC174A | 2N3638A

Keywords - UMB6N transistor datasheet

 UMB6N cross reference
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