UMG11N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMG11N
SMD Transistor Code: G11
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC88A
SOT353
UMG11N Transistor Equivalent Substitute - Cross-Reference Search
UMG11N Datasheet (PDF)
emg11 umg11n fmg11a.pdf
EMG11 / UMG11N / FMG11ATransistorsEmitter common (dual digital transistors)EMG11 / UMG11N / FMG11A External dimensions (Units : mm) Features1) Two DTA123Js chips in a EMT or UMT or SMTEMG11 package.(4) (3)( )2( ) ( )5 11.21.6 Equivalent circuitEach lead has same dimensionsEMG11 / UMG11N FMG11AROHM : EMT5(3) (2) (1) (3) (4) (5)R1 R1 R1 R1R2 R2 R2 R2U
chumg11gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHUMG11GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88A/SOT-353)SC-88A/SOT353* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
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