UMG11N Datasheet. Specs and Replacement

Type Designator: UMG11N  📄📄 

SMD Transistor Code: G11

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC88A SOT353

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UMG11N datasheet

 ..1. Size:55K  rohm

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UMG11N

EMG11 / UMG11N / FMG11A Transistors Emitter common (dual digital transistors) EMG11 / UMG11N / FMG11A External dimensions (Units mm) Features 1) Two DTA123Js chips in a EMT or UMT or SMT EMG11 package. (4) (3) ( ) 2 ( ) ( ) 5 1 1.2 1.6 Equivalent circuit Each lead has same dimensions EMG11 / UMG11N FMG11A ROHM EMT5 (3) (2) (1) (3) (4) (5) R1 R1 R1 R1 R2 R2 R2 R2 U... See More ⇒

 ..2. Size:35K  rohm

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UMG11N

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 9.1. Size:184K  chenmko

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UMG11N

CHENMKO ENTERPRISE CO.,LTD CHUMG11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88A/SOT-353) SC-88A/SOT353 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu... See More ⇒

Detailed specifications: PDTA115ES, PDTA115TK, PDTA115TS, UMD2N, UMD3N, UMD6N, PDTA123EEF, UMD9N, 2SB817, PDTA123EK, PDTA123ES, UMG1N, UMG2N, UMG3N, UMG4N, UMG5N, UMG6N

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