UMG4N Datasheet. Specs and Replacement

Type Designator: UMG4N  📄📄 

SMD Transistor Code: G4

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC88A SOT353

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UMG4N datasheet

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UMG4N

EMG4 / UMG4N / FMG4A Transistors General purpose (dual digital transistors) EMG4 / UMG4N / FMG4A External dimensions (Unit mm) Features 1) Two DTC114T chips in a EMT or UMT or SMT EMG4 package. (4) (3) (2) ( ) (1) 5 Equivalent circuits 1.2 1.6 EMG4 / UMG4N FMG4A (3) (2) (1) (3) (4) (5) R1 R1 R1 R1 ROHM EMT5 Each lead has same dimensions (4) (5) (2) (1) R... See More ⇒

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UMG4N

(96-448-A114T) ... See More ⇒

 ..3. Size:223K  diodes

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UMG4N

UMG4N DUAL NPN PRE-BIASED TRANSISTOR Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT-353 Case SOT-353 3 2 1 (3) (2) (1) Case Material Molded Plastic. UL Flammability ... See More ⇒

Detailed specifications: PDTA123EEF, UMD9N, UMG11N, PDTA123EK, PDTA123ES, UMG1N, UMG2N, UMG3N, 2N4401, UMG5N, UMG6N, UMG8N, UMG9N, UMH10N, UMH11N, UMH1N, UMH2N

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