All Transistors. UMG4N Datasheet

 

UMG4N Datasheet and Replacement


   Type Designator: UMG4N
   SMD Transistor Code: G4
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC88A SOT353
 

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UMG4N Datasheet (PDF)

 ..1. Size:42K  rohm
 emg4 umg4n fmg4a.pdf pdf_icon

UMG4N

EMG4 / UMG4N / FMG4A Transistors General purpose (dual digital transistors) EMG4 / UMG4N / FMG4A External dimensions (Unit : mm) Features1) Two DTC114T chips in a EMT or UMT or SMTEMG4package.(4) (3)(2)( ) (1)5 Equivalent circuits 1.21.6EMG4 / UMG4N FMG4A(3) (2) (1) (3) (4) (5)R1 R1 R1 R1ROHM : EMT5 Each lead has same dimensions(4) (5) (2) (1)R

 ..2. Size:48K  rohm
 umg4n fmg4a g4sot353 sot23-5.pdf pdf_icon

UMG4N

(96-448-A114T)

 ..3. Size:223K  diodes
 umg4n.pdf pdf_icon

UMG4N

UMG4N DUAL NPN PRE-BIASED TRANSISTOR Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT-353 Case: SOT-353 3 2 1(3) (2) (1) Case Material: Molded Plastic. UL Flammability

Datasheet: PDTA123EEF , UMD9N , UMG11N , PDTA123EK , PDTA123ES , UMG1N , UMG2N , UMG3N , D880 , UMG5N , UMG6N , UMG8N , UMG9N , UMH10N , UMH11N , UMH1N , UMH2N .

History: UMW2N | BD976 | 2SA500Y | 2SC2306 | KT3102B | CH847UPNGP | TN2907AR

Keywords - UMG4N transistor datasheet

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