UMH7N Datasheet. Specs and Replacement

Type Designator: UMH7N  📄📄 

SMD Transistor Code: H7

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC88 SOT353

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UMH7N datasheet

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UMH7N

UMH7N Transistors General purpose (dual digital transistors) UMH7N External dimensions (Units mm) Feature 1) Includes two DTC143T transistors in a single UMT package. Absolute maximum ratings (Ta=25 C) 1.25 Parameter Symbol Limits Unit 2.1 Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 0.1Min. Collector ... See More ⇒

Detailed specifications: UMH10N, UMH11N, UMH1N, UMH2N, UMH3N, UMH4N, UMH5N, UMH6N, 2SC2383, UMH8N, UMH9N, UMS1N, UMS2N, UMT1006, UMT1007, UMT1008, UMT1009

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