UMH7N Datasheet and Replacement
Type Designator: UMH7N
SMD Transistor Code: H7
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC88 SOT353
UMH7N Substitution
UMH7N Datasheet (PDF)
umh7n.pdf

UMH7NTransistorsGeneral purpose (dual digital transistors)UMH7N External dimensions (Units : mm) Feature1) Includes two DTC143T transistors in a single UMTpackage. Absolute maximum ratings (Ta=25C) 1.25Parameter Symbol Limits Unit2.1Collector-base voltage VCBO 50 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 5 V0.1Min.Collector
Datasheet: UMH10N , UMH11N , UMH1N , UMH2N , UMH3N , UMH4N , UMH5N , UMH6N , 2SC828 , UMH8N , UMH9N , UMS1N , UMS2N , UMT1006 , UMT1007 , UMT1008 , UMT1009 .
History: 2SC1242 | BC558BTA | BC727-16 | TN3417 | 2SD1332 | 2SC256 | GES3250A
Keywords - UMH7N transistor datasheet
UMH7N cross reference
UMH7N equivalent finder
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History: 2SC1242 | BC558BTA | BC727-16 | TN3417 | 2SD1332 | 2SC256 | GES3250A



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