UMH7N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMH7N
SMD Transistor Code: H7
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC88 SOT353
UMH7N Transistor Equivalent Substitute - Cross-Reference Search
UMH7N Datasheet (PDF)
umh7n.pdf
UMH7NTransistorsGeneral purpose (dual digital transistors)UMH7N External dimensions (Units : mm) Feature1) Includes two DTC143T transistors in a single UMTpackage. Absolute maximum ratings (Ta=25C) 1.25Parameter Symbol Limits Unit2.1Collector-base voltage VCBO 50 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 5 V0.1Min.Collector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .