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UMH7N Specs and Replacement


   Type Designator: UMH7N
   SMD Transistor Code: H7
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC88 SOT353

 UMH7N Transistor Equivalent Substitute - Cross-Reference Search

   

UMH7N detailed specifications

 ..1. Size:18K  rohm
 umh7n.pdf pdf_icon

UMH7N

UMH7N Transistors General purpose (dual digital transistors) UMH7N External dimensions (Units mm) Feature 1) Includes two DTC143T transistors in a single UMT package. Absolute maximum ratings (Ta=25 C) 1.25 Parameter Symbol Limits Unit 2.1 Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 0.1Min. Collector ... See More ⇒

Detailed specifications: UMH10N , UMH11N , UMH1N , UMH2N , UMH3N , UMH4N , UMH5N , UMH6N , 2SC2383 , UMH8N , UMH9N , UMS1N , UMS2N , UMT1006 , UMT1007 , UMT1008 , UMT1009 .

Keywords - UMH7N transistor specs

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