UMS1N Datasheet. Specs and Replacement
Type Designator: UMS1N 📄📄
SMD Transistor Code: S1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
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UMS1N datasheet
ums1n fms1a s1 sot23-5 sot353.pdf ![]()
Transistors Emitter common (dual transistors) UMS1N / FMS1A FFeatures FExternal dimensions (Units mm) 1) Two 2SA1037AK chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-421-A22) 553 Transistors UMS... See More ⇒
Transistors Emitter common (dual transistors) UMS1N / FMS1A FFeatures FExternal dimensions (Units mm) 1) Two 2SA1037AK chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-421-A22) 553 Transistors UMS... See More ⇒
Detailed specifications: UMH2N, UMH3N, UMH4N, UMH5N, UMH6N, UMH7N, UMH8N, UMH9N, 2N2907, UMS2N, UMT1006, UMT1007, UMT1008, UMT1009, UMT1011, UMT1012, UMT1203
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