UMS1N Specs and Replacement
Type Designator: UMS1N
SMD Transistor Code: S1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SC88A SOT353
UMS1N Transistor Equivalent Substitute - Cross-Reference Search
UMS1N detailed specifications
ums1n fms1a s1 sot23-5 sot353.pdf
Transistors Emitter common (dual transistors) UMS1N / FMS1A FFeatures FExternal dimensions (Units mm) 1) Two 2SA1037AK chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-421-A22) 553 Transistors UMS... See More ⇒
ums1n.pdf
Transistors Emitter common (dual transistors) UMS1N / FMS1A FFeatures FExternal dimensions (Units mm) 1) Two 2SA1037AK chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-421-A22) 553 Transistors UMS... See More ⇒
Detailed specifications: UMH2N , UMH3N , UMH4N , UMH5N , UMH6N , UMH7N , UMH8N , UMH9N , 2N2907 , UMS2N , UMT1006 , UMT1007 , UMT1008 , UMT1009 , UMT1011 , UMT1012 , UMT1203 .
Keywords - UMS1N transistor specs
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