UMW10N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMW10N
SMD Transistor Code: W10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 0.95 pF
Forward Current Transfer Ratio (hFE), MIN: 27
Noise Figure, dB: -
Package: SC88 SOT353
UMW10N Transistor Equivalent Substitute - Cross-Reference Search
UMW10N Datasheet (PDF)
umw10n fmw10 w10 sot363 sot23-6.pdf
UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMXTransistorsTransistorsUMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX(94S-404-C101)
umw10n.pdf
EMX4 / UMW6N / UMW10N / UMX4N /Transistors FMW6 / FMW10 / IMX4High transition frequency (dual transistors)EMX4 / UMW6N / UMW10N / UMX4N /FMW6 / FMW10 / IMX4 Features1) Two 2SC3837K chips in a EMT or UMT or SMT package.2) High transition frequency. (fT=1.5GHz)3) Low output capacitance. (Cob=0.95pF) Equivalent circuitEMX4 / UMX4N IMX4 UMW6N FMW6 UMW10 FMW10(3) (2) (1) (4) (5
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
