UMW1N Datasheet. Specs and Replacement

Type Designator: UMW1N  📄📄 

SMD Transistor Code: W1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SC88A SOT353

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UMW1N datasheet

 ..1. Size:111K  rohm

 umw1n fmw1 w1 sot23-5 sot353.pdf pdf_icon

UMW1N

Transistors Emitter common (dual transistors) UMW1N / FMW1 FFeatures FExternal dimensions (Units mm) 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-424-C22) 559 Transistors UMW1N... See More ⇒

 ..2. Size:112K  rohm

 umw1n.pdf pdf_icon

UMW1N

Transistors Emitter common (dual transistors) UMW1N / FMW1 FFeatures FExternal dimensions (Units mm) 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-424-C22) 559 Transistors UMW1N... See More ⇒

Detailed specifications: UMT1N, UMT2003, UMT2N, UMT2OOO, UMT3584, UMT3585, UMT3N, UMW10N, C1815, UMW2N, UMW6N, UMW7N, UMW8N, UMX1N, UMX2N, UMX3N, UMX4N

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