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UMW1N Specs and Replacement


   Type Designator: UMW1N
   SMD Transistor Code: W1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SC88A SOT353
 

 UMW1N Substitution

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UMW1N detailed specifications

 ..1. Size:111K  rohm
 umw1n fmw1 w1 sot23-5 sot353.pdf pdf_icon

UMW1N

Transistors Emitter common (dual transistors) UMW1N / FMW1 FFeatures FExternal dimensions (Units mm) 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-424-C22) 559 Transistors UMW1N... See More ⇒

 ..2. Size:112K  rohm
 umw1n.pdf pdf_icon

UMW1N

Transistors Emitter common (dual transistors) UMW1N / FMW1 FFeatures FExternal dimensions (Units mm) 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-424-C22) 559 Transistors UMW1N... See More ⇒

Detailed specifications: UMT1N , UMT2003 , UMT2N , UMT2OOO , UMT3584 , UMT3585 , UMT3N , UMW10N , C1815 , UMW2N , UMW6N , UMW7N , UMW8N , UMX1N , UMX2N , UMX3N , UMX4N .

History: BUY62 | UMX4N

Keywords - UMW1N transistor specs

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