All Transistors. UMW1N Datasheet

 

UMW1N Datasheet, Equivalent, Cross Reference Search

Type Designator: UMW1N

SMD Transistor Code: W1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SC88A_SOT353

UMW1N Transistor Equivalent Substitute - Cross-Reference Search

 

UMW1N Datasheet (PDF)

1.1. umw1n fmw1 w1 sot23-5 sot353.pdf Size:111K _rohm

UMW1N
UMW1N

Transistors Emitter common (dual transistors) UMW1N / FMW1 FFeatures FExternal dimensions (Units: mm) 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-424-C22) 559 Transistors UMW1N /

1.2. umw1n.pdf Size:112K _rohm

UMW1N
UMW1N

Transistors Emitter common (dual transistors) UMW1N / FMW1 FFeatures FExternal dimensions (Units: mm) 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-424-C22) 559 Transistors UMW1N /

 

Datasheet: D32W7 , D32W8 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , S9014 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , D33D3 , D33D30 , D33D4 .

 
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